absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current -4.0 i d @ v gs = 12v, t c = 100c continuous drain current -2.4 i dm pulsed drain current -16 p d @ t c = 25c max. power dissipation 25 w linear derating factor 0.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 171 mj i ar avalanche current -4.0 a e ar repetitive avalanche energy 2.5 mj dv/dt peak diode recovery dv/dt a -27 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 ( for 5s) weight 0.42 (typical) g pd - 91804d pre-irradiation international rectifiers rad-hard tm hexfet ? mosfet technology provides high performance power mosfets for space applications. this technology has over a de- cade of proven performance and reliability in satellite applications. these devices have been characterized for both total dose and single event effects (see). the combination of low rdson and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a radiation hardened power mosfet surface mount (lcc-18) 3/1/00 www.irf.com 1 product summary part number radiation level r ds(on) i d qpl part number IRHE9230 100k rads (si) 0.80 w -4.0a jansr2n7390u irhe93230 300k rads (si) 0.80 w -4.0a jansf2n7390u features: n single event effect (see) hardened n low r ds(on) n low total gate charge n proton tolerant n simple drive requirements n ease of paralleling n hermetically sealed n ceramic package n surface mount n light weight for footnotes refer to the last page lcc - 18 IRHE9230 200v, p-channel ref: mil-prf-19500/630 rad-hard ? hexfet ? mosfet technology
IRHE9230 pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage -200 v v gs =0 v, i d = -1.0ma d bv dss / d t j temperature coefficient of breakdown -0.25 v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source 0.80 v gs = -12v, i d = -2.4a on-state resistance 0.92 w v gs = -12v, i d = -4.0a v gs(th) gate threshold voltage -2.0 -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 2.5 s ( )v ds > -15v, i ds = -2.4a ? i dss zero gate voltage drain current -25 v ds = -160v,v gs =0v -250 v ds = -160v v gs = 0v, t j = 125c i gss gate-to-source leakage forward -100 v gs = -20v i gss gate-to-source leakage reverse 100 v gs = 20v q g total gate charge 45 v gs = -12v, i d = -4.0a q gs gate-to-source charge 10 nc v ds = -50v q gd gate-to-drain (miller) charge 25 t d (on) turn-on delay time 30 v dd = -100v, i d = -4.0a, t r rise time 30 r g = 7.5 w t d (off) turn-off delay time 75 t f fall time 65 l s + l d total inductance 6.1 c iss input capacitance 1200 v gs = 0v, v ds = -25v c oss output capacitance 190 pf f = 1.0mhz c rss reverse transfer capacitance 45 na w ? nh ns m a note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page thermal resistance parameter min typ max units test conditions r thjc junction-to-case 5.0 r thjpcb junction-to-pc board 19 solder to a copper clad pc board c/w source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) -4.0 i sm pulse source current (body diode) -16 v sd diode forward voltage -5.0 v t j = 25c, i s = -4.0a, v gs = 0v ? t rr reverse recovery time 400 ns t j = 25c, i f = -4.0a, di/dt 3 -100a/ m s q rr reverse recovery charge 1.6 c v dd -25v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a measured from the center of drain pad to center of source pad
www.irf.com 3 pre-irradiation IRHE9230 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter 100k rads(si) 1 300k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -200 -200 v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage ? - 2.0 - 4.0 -2.0 -5.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward -100 -100 na v gs = -20v i gss gate-to-source leakage reverse 100 100 v gs = 20 v i dss zero gate voltage drain current -25 -25 a v ds =-160v, v gs =0v r ds(on) static drain-to-source ? ??? ??? w v gs = -12v, i d =-2.4a on-state resistance (to-3) r ds(on) static drain-to-source ? 0.80 0.80 w v gs = -12v, i d =-2.4a on-state resistance (lcc-18) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part number IRHE9230 (jansr2n7390u) 2. part number irhe93230 (jansf2n7390u) fig a. single event effect, safe operating area v sd diode forward voltage ? -5.0 -5.0 v v gs = 0v, i s = -4.0a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. single event effect safe operating area ion let energy range v ds(v) mev/(mg/cm 2 )) (mev) (m) @ v gs =0v @ v gs =-5v @ v gs =-10v @ v gs =-15v @ v gs =-20v cu 28 285 43 -200 -200 -200 -200 br 36.8 305 39 -200 -200 -160 -75 -250 -200 -150 -100 -50 0 0 5 10 15 20 vgs vds cu br
IRHE9230 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1 10 100 20s pulse width t = 25 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 1 10 100 1 10 100 20s pulse width t = 150 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -12v -4.0a 1 10 100 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v = -50v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j
www.irf.com 5 pre-irradiation IRHE9230 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 400 800 1200 1600 2000 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 50 60 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -4.0a v = -40v ds v = -100v ds v = -160v ds 0.1 1 10 100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms
IRHE9230 pre-irradiation 6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit fig 10b. switching time waveforms v ds -12v pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 t , case temperature ( c) -i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectan g ular pulse duration ( sec ) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
www.irf.com 7 pre-irradiation IRHE9230 fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v ( br ) dss i as r g i as 0.01 w t p d.u.t l v ds v dd driver a 15v -20v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge -12v d.u.t. v ds i d i g -3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - -12v -12v 25 50 75 100 125 150 0 100 200 300 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -1.8a -2.5a -4.0a
IRHE9230 pre-irradiation 8 www.irf.com ? pulse width 300 m s; duty cycle 2% ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. 160 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = -25v, starting t j = 25c, l= 21.4mh peak i l = -4.0a, v gs = -12v a i sd -4.0a, di/dt -150a/ m s, v dd -200v, t j 150c case outline and dimensions lcc-18 footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir european regional center: 439/445 godstone rd, whyteleafe, surrey cr3 obl, uk tel: ++ 44 (0)20 8645 8000 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 (0) 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 011 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171 tel: 81 (0)3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 (0)838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673 tel: 886-(0)2 2377 9936 data and specifications subject to change without notice. 3/00
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